| 摘要 |
PROBLEM TO BE SOLVED: To provide a preparing method of such an alignment mark that can be easily removed from the surface of a substrate without leaving traces after using the alignment mark for alignment. SOLUTION: A first photoresist layer 32 is formed on the substrate 30, thereafter, the first photoresist layer 32 is patterned and, thereby, the alignment mark 33 is formed from the first photoresist layer 32. Subsequently, a second photoresist layer 34 is formed so as to cover the alignment mark 33 and, thereafter, the second photoresist layer 34 is patterned on the basis of the alignment mark 33. After etching the surface of the substrate 30 by using resist mask 35 thus formed, a resist mask 35 and the alignment mark 33 are removed and the region occupied by the alignment mark 33 is flattened.
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