| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that the evaporation of ZnO having high vapor pressure occurs vigorously, thereby making it difficult to control the composition, and homogeneous superlattice cannot be formed when a homologous series M<1> M<2> O3 (ZnO)m is grown by a thin film growth method. SOLUTION: The natural superlattice homologous single crystal thin film comprises double oxides which are epitaxilally grown on a ZnO epitaxial thin film formed on a single crystal substrate or the single crystal substrate from which the thin film has disappeared or a ZnO single crystal and is expressed by formula: M<1> M<2> O3 (ZnO)m (wherein, M<1> is at lest one of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y; M<2> is at least one of Mn, Fe, Ga, In and Al; and m is a natural number which is >=1). The homologous single crystal thin film is manufactured by depositing the double oxide films and subjecting the stacked films to heat-diffusion treatment. The natural superlattice homologous single crystal thin film is used for an optical device, an electronic device, an X-ray optical device of the like.</p> |
