| 摘要 |
<p>PROBLEM TO BE SOLVED: To inexpensively and easily produce a high quality polycrystalline silicon low in impurity concentration and high in crystallinity. SOLUTION: The crystalline silicon production apparatus crystallizes, upward from the inner bottom face of a casting mold 2, fused silicon H which is stored in the casting mold 2 in a chamber by imparting a positive temperature gradient in the above direction. In the apparatus, a gas flow generation device which generates a conveyance gas flow for conveying a gas generated from the inside of the casting mold 2, is provided at the outer side of the molds 2 which are arranged in line. The periphery of each of the molds 2 is surrounded by a heat insulating material 8 which is lower in height than the molds 2, and a trough-like passage 9 composed of the side wall of the mold 2 and the upper face of the insulating material 8 is formed. A gas discharge pipe 16 is provided in such a state as to direct its tip toward the upper face of the insulating material 8 between the molds 2 and also to face the cross position of the through-like passages 9.</p> |
