| 摘要 |
PROBLEM TO BE SOLVED: To stably maintain the property of a TFT (thin film transistor) for a long term without accumulating heat generated resulting from the TFT. SOLUTION: This TFT is provided with a semiconductor layer 1a which has channel regions inside each of which is held by a source region and a drain region, an insulation film which is formed on the semiconductor layer, a gate electrode 210 formed on the insulation film, and a source electrode 220 and a drain electrode 230 which are connected respectively to the source regions and the drain regions and also is provided with a conductive layer 501 which is connected or extendingly provided to at least one of the gate electrode, the source electrode and the drain electrode and the conductive layer is exposed to the outside thorough an opening part 511 at its heat radiating part 501a. |
