发明名称 |
Lateral heterojunction bipolar transistor and method of fabricating the same |
摘要 |
A lateral heterojunction bipolar transistor comprises a first semiconductor layer in a mesa configuration disposed on an insulating layer, a second semiconductor layer formed by epitaxial growth on the side surfaces of the first semiconductor layer and having a band gap different from that of the first semiconductor layer, and a third semiconductor layer formed by epitaxial growth on the side surfaces of the second semiconductor layer and having a band gap different from that of the second semiconductor layer. The first semiconductor layer serves as a collector of a first conductivity type. At least a part of the second semiconductor layer serves as an internal base layer of a second conductivity type. At least a part of the third semiconductor layer serves as an emitter operating region of the first conductivity type. The diffusion of an impurity is suppressed in the internal base formed by epitaxial growth.
|
申请公布号 |
US6563146(B1) |
申请公布日期 |
2003.05.13 |
申请号 |
US20000692215 |
申请日期 |
2000.10.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YUKI KOICHIRO;KUBO MINORU |
分类号 |
H01L29/735;H01L21/331;H01L29/737;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/735 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|