发明名称 |
Bit-line oxidation by removing ONO oxide prior to bit-line implant |
摘要 |
A method for fabricating a semiconductor structure includes forming a masking pattern on an ONO layer, wherein the ONO layer is on a semiconductor substrate, forming pocket regions in the substrate with the masking pattern as a doping mask, etching the ONO layer with the masking pattern as an etching mask forming residual oxide regions, etching the ONO layer with a buffered oxide etch or a plasma etch exposing regions of the substrate, and removing the mask and forming a bit-line oxide layer on the exposed regions.
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申请公布号 |
US6562683(B1) |
申请公布日期 |
2003.05.13 |
申请号 |
US20000651704 |
申请日期 |
2000.08.31 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG FEI;FOOTE DAVID K.;PARK STEPHEN K. |
分类号 |
H01L21/265;H01L21/311;H01L21/314;H01L21/32;H01L21/336;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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