发明名称 |
Semiconductor device of multi-wiring structure and method of manufacturing the same |
摘要 |
A plurality of wiring layers are laminated on an LSI chip. Each wiring layer includes an electrode to which is applied a mechanical pressure, a first insulating film formed in a region where it is necessary to have a high mechanical strength and having the electrode formed therein, a second insulating film formed in the same layer as the layer of the first insulating film and formed in a region where a mechanical strength higher than that of the first insulating layer is not required, and a wiring layer formed on the surface of the second insulating film.
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申请公布号 |
US6563218(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20010995602 |
申请日期 |
2001.11.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUNAGA NORIAKI;SHIMOOKA YOSHIAKI;HIGASHI KAZUYUKI;SHIBATA HIDEKI |
分类号 |
H01L23/52;H01L21/31;H01L21/3205;H01L21/822;H01L23/485;H01L23/522;H01L23/532;H01L27/04;(IPC1-7):H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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