| 摘要 |
PROBLEM TO BE SOLVED: To make the aspect ratio of a far-field pattern of a laser beam closer to one in a semiconductor laser which emits laser beam of a wavelength band of 630 nm. SOLUTION: The semiconductor laser comprises an n-type GaAs substrate having a belt-like inclined surface in part of the principal plane; an n-type clad layer, an active layer having a quantum well structure of two cycles, a p-type clad layer (including a current blocking layer in the middle), and a p-type contact layer, which are stacked in order on the principal plane of the substrate; a p-side electrode formed on the contact layer; and an n-side electrode formed on the rear face of the substrate. A laser beam of a wavelength band of 630 nm is emitted from 1 mm-wide parts of the active layer on both end faces of the inclined surface. A well layer of the active layer has a tensile strain structure, and both sides of the light emitting active layer serve for real refractive index waveguides having a low refractive index, and the aspect ratio of a far-field pattern of the laser beam is smaller than 1.6.
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