| 摘要 |
PURPOSE: Provided is a chemically amplified positive resist composition which is suitable for resist pattern having excellent smoothness, or excimer laser lithography such as KrF, which has excellent sensitivity and resolution. CONSTITUTION: The composition comprises a resin, a radiation sensitive acid generator, and a compound represented by formula 1(wherein each of R1 and R2 is independently C1-C15 alkyl, C1-C8 alkyl with at least three hydrogen substituted with fluorine, or C6-C10 aryl), wherein the resin has a polymerization unit derived from p-hydroxystyrene and thus is insoluble or scarcely-soluble in alkali in itself, but is soluble in alkali after acid-labile group is dissociated by acid. |
