发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is compatible with various packages. SOLUTION: Pad columns are arranged near the chip along EAST zone and WEST zone (E/W zones). In this peripheral pad arrangement, a VDD pad 11 and a VSS pad 12 are arranged at the ends of the NORTH zone and the SOUTH zone (N/S zones) in the central section, in order to make them adaptable to TSOP even for a peripheral pad arrangement. Furthermore, taking into consideration of frame design in the case of TSOP, some pads at the ends of pad columns are arranged in an order which is reverse to the order of the pin arrangement. Moreover, for a package which does not require consideration of frame design, a VDDQ pad 19 and a VSSQ pad 20 are arranged in the same order as the pin arrangement. Taking into consideration of the use for a BGA package, one couple of a VDD pad 17 and a VSS pad 18 is arranged at each extreme end of the pad columns.</p>
申请公布号 JP2003133365(A) 申请公布日期 2003.05.09
申请号 JP20010331137 申请日期 2001.10.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUWA MASATO;JINBO SHINICHI;DEN MASUNARI;OKAMOTO TAKEO;ISHIDA KOZO;YONETANI HIDEKI;NAGASAWA TSUTOMU;YAMAUCHI TADAAKI;MATSUMOTO JUNKO
分类号 G11C11/407;G11C5/06;G11C7/00;G11C11/34;G11C11/401;H01L21/60;H01L23/48;H01L23/50;H01L23/52;H01L27/10;H03K3/356;(IPC1-7):H01L21/60 主分类号 G11C11/407
代理机构 代理人
主权项
地址