发明名称 FABRICATING TECHNOLOGY FOR THIN FILM DEPOSITION SYSTEM USING PULSED LASER
摘要 PURPOSE: Fabricating technology for thin film deposition system using pulsed laser is provided to fabricate a hot wall furnace for growing a perfect single crystal thin film while the heterogeneous particles vaporized by a laser beam are not deposited on a substrate. CONSTITUTION: A deposition sample target(2) is irradiated to deposit a thin film by using pulsed laser beam as an energy source. The hot wall furnace(3) is installed in the front of a deposition substrate(4) to form a single crystal thin film. The deposition substrate is rotated at 2-5 millimeter/hour to fabricate a homogeneous sample by using a direct current(DC) motor and a sprocket. The temperature of the deposition substrate is controlled to fabricate the single crystal thin film by using a temperature controller and the hot wall furnace.
申请公布号 KR20030034294(A) 申请公布日期 2003.05.09
申请号 KR20010064981 申请日期 2001.10.22
申请人 HONG, KWANG JOON 发明人 BAEK, HYEONG WON;HONG, KWANG JOON;JUNG, JUN U;MUN, JONG DAE;PARK, CHANG SEON;YOO, SANG HA
分类号 H01L21/203;(IPC1-7):H01L21/203 主分类号 H01L21/203
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