| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent variations in sheet resistance values, which occur when a thin film semiconductor layer is formed by epitaxial growth on a compound semiconductor single crystal substrate having a substrate off angle. SOLUTION: When the thin film semiconductor layer is epitaxially grown on the compound semiconductor single crystal substrate, the compound semiconductor single crystal substrate which has such accuracy of the substrate off angle that variations in entrapped impurity concentrations fall within prescribed acceptable values is used, and thus the sheet resistance values fall within a prescribed range.
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