发明名称 |
RF power amplifier circuit |
摘要 |
A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (2), a biasing circuit (6) biasing the power transistor; a peak detector (8) measuring the output voltage of the power transistor; and a comparator circuit (12) connected to the peak detector (8) and designed to reduce the base current of the power transistor (2) when controlled by the peak detector (8).
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申请公布号 |
US2003087626(A1) |
申请公布日期 |
2003.05.08 |
申请号 |
US20020270345 |
申请日期 |
2002.10.11 |
申请人 |
PRIKHODKO DMITRY PAVLOVICH;VAN ZUIJLEN ALBERTUS GERARDUS;KRAMER NIELS |
发明人 |
PRIKHODKO DMITRY PAVLOVICH;VAN ZUIJLEN ALBERTUS GERARDUS WILHELMUS PHILIPUS;KRAMER NIELS |
分类号 |
H03F1/30;H03F1/52;H03F3/24;H04B1/04;(IPC1-7):H04B1/16 |
主分类号 |
H03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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