发明名称 RF power amplifier circuit
摘要 A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (2), a biasing circuit (6) biasing the power transistor; a peak detector (8) measuring the output voltage of the power transistor; and a comparator circuit (12) connected to the peak detector (8) and designed to reduce the base current of the power transistor (2) when controlled by the peak detector (8).
申请公布号 US2003087626(A1) 申请公布日期 2003.05.08
申请号 US20020270345 申请日期 2002.10.11
申请人 PRIKHODKO DMITRY PAVLOVICH;VAN ZUIJLEN ALBERTUS GERARDUS;KRAMER NIELS 发明人 PRIKHODKO DMITRY PAVLOVICH;VAN ZUIJLEN ALBERTUS GERARDUS WILHELMUS PHILIPUS;KRAMER NIELS
分类号 H03F1/30;H03F1/52;H03F3/24;H04B1/04;(IPC1-7):H04B1/16 主分类号 H03F1/30
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