Low-resistive tungsten silicide layer strongly adhered to lower layer and semiconductor device using the same

摘要

Tungsten silicide WSix is grown through reduction of WF6 with SiCl2H2, and the flow rate between WF6 and SiCl2H2 is controlled in such a manner that the composition ratio x ranges from 2.0 to 2.2 in an initial stage for forming cores on a doped polysilicon layer, and is treated with heat at 700 degrees to 850 degrees in centigrade so as to grow tungsten silicide grains with <001 > orientation faster than tungsten silicide grains with <101 > orientation; the tungsten silicide WSix is tightly adhered to the doped polysilicon, and the abnormal oxidation is restricted during the heat treatment.