Protection of an integrated circuit against ESD and other overvoltages

摘要

The integrated circuit (20) includes a metal oxide semiconductor (MOS) transistors which are provided for short-circuiting the supply conductors (12,13) arranged in a supply rail (11). The MOS transistors are integrated in the supply rail, below the conductors. The control circuits (6) detect electrostatic discharge (ESD) and overvoltage between the supply conductors. <??>An Independent claim is also included for method of integrating MOS transistors for short- circuiting the supply conductors.