发明名称 |
THREE-AXES SENSOR AND A METHOD OF MAKING SAME |
摘要 |
A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer. The mating structures of the first substrate are disposed in a confronting relationship with the mating structures of the second substrate or wafer. A eutectic bonding layer associated with one of the mating structures facilitates bonding between the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure. |
申请公布号 |
EP1305570(A2) |
申请公布日期 |
2003.05.02 |
申请号 |
EP20010959412 |
申请日期 |
2001.07.30 |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
KUBENA, RANDALL, L.;CHANG, DAVID, T. |
分类号 |
B81B3/00;B81C1/00;B81C3/00;G01C19/5656;G01P15/08;G01P15/18;H01H1/00;H01H59/00;H01L41/08 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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