| 摘要 |
PURPOSE: To provide a ferroelectric memory having MFMIS structure which is provided with a rewrite function for a ferroelectric memory cell having MFMIS structure and which can perform a rewrite mode. CONSTITUTION: In a ferroelectric memory in which a plurality of ferroelectric memory cells S, 1, 2, 3,... having MFMIS structure using laminated films of metal film/ferroelectric substance film/metal film are arranged in a matrix state in a gate electrode part of a MIS transistor, which has cell arrays in which each gate of ferroelectric memory cells of the same row is connected to common word lines (WLn, WLn+1,...), each drain of ferroelectric memory cells of the same column is connected to common bit lines BL (BLn, BLn+1,...), and each source of ferroelectric memory cells of the same row is connected to common source lines SL (SLn, SLn+1,...), and the memory has a read-out mode, a write-in mode, an erase mode, and a rewrite mode.
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