| 摘要 |
The present invention provides a method for manufacturing semiconductors with trench capacitors having a low-resistance buried strap, comprising providing a substrate, forming a trench in the substrate, forming a glass doping layer with a first predetermined depth at the bottom of the trench, wherein the glass doping layer is doped with an n-type dopant, forming a first dielectric layer covering the glass doping layer in the trench, diffusing the n-type dopant of the glass doping layer to the substrate by annealing to form a buried plate, removing the first dielectric layer and the glass doping layer, sequentially forming a second dielectric layer and a first conductive layer having depths approximately equal to the first predetermined depth in the trench, wherein the region above the first conductive region is defined as the collar region, forming a U-shaped insulating layer in the collar region, forming a collar conductive layer at the bottom of the U-shaped insulation layer in the collar region, removing the U-shaped insulating layer not in contact with the collar conductive layer to form a collar insulating layer, and forming the buried strap in the trench.
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