发明名称 |
Verfahren zur Herstellung von hochreinem Silizium |
摘要 |
The invention relates to a method for producing high-purity silicon, especially for photovoltaic purposes and preferably for using in the production of wafers, according to which silane is thermally decomposed in order to obtain silicon. The inventive method is characterised in that gaseous silane is injected into a silicon melt and, following the injection of the silane, the melt is cast and solidified.
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申请公布号 |
DE10151159(A1) |
申请公布日期 |
2003.04.30 |
申请号 |
DE20011051159 |
申请日期 |
2001.10.19 |
申请人 |
SILICON TECHNOLOGIES AS, HOEVIK |
发明人 |
HUGO, FRANZ;BJOERSETH, ALF;CECCAROLI, BRUNO;MAURITS, JAN |
分类号 |
C01B33/027;C01B33/029;(IPC1-7):C01B33/027 |
主分类号 |
C01B33/027 |
代理机构 |
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主权项 |
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地址 |
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