Photolithography method for fabrication of microstructure e.g. dynamic RAM interconnect, involves exposing substrate with trimming mask having trimming openings, after initial exposure using alternating phase mask

摘要

A substrate is exposed with an alternating phase mask to form a microstructure e.g. interconnects of a dynamic RAM (DRAM) on the substrate. The substrate is then exposed with a trimming mask having at least two trimming openings (31,32), for producing an alternating phase shift. An Independent claim is also included for a trimming mask.