METHOD FOR FABRICATING MAGNETORESISTIVE THIN FILM OF MAGNETORESISTIVE SPIN VALVE BY USING DIFFERENCE OF COERCIVE FORCE

摘要

PURPOSE: A method for fabricating a magnetoresistive thin film of a magnetoresistive spin valve by using a difference of coercive force is provided to form a spin valve structure that expresses high magnetoresistivity and high magnetic sensitivity in a low magnetic field, by controlling the spin of a CoFe layer and a NiFe layer while using a coercive force. CONSTITUTION: The CoFe layer is formed as the first ferromagnetic layer by a thickness of 20-100 angstrom in a condition that sputtering power is 20-100 watt and the partial pressure of Ar is 1-10 milliTorr so that the CoFe layer has high coercive force. The NiFe layer is formed as the second ferromagnetic layer by a thickness of 20-100 angstrom in a condition that sputtering power is 30-100 watt and the partial pressure of Ar is 1-15 milliTorr so that the NiFe layer has low coercive force.