| 摘要 |
PURPOSE: A method for fabricating a storage node of a semiconductor device is provided to improve production yield and reliance of the device by leaving a conducting layer to use it as a buffer layer while forming a spacer of the sidewall of a storage node and then eliminating it later to prevent loss of an interlayer dielectric while removing a core insulation layer pattern. CONSTITUTION: A device isolation layer(31) is formed to define an active region on a semiconductor substrate(30). A word line(32) and bit line(33) are formed on the active region. An interlayer dielectric(34) is on the resultant structure and then etched to form a contact hole, on the sidewall of which an insulation spacer(36) is formed. The first conducting layer(37) and a core insulation layer are formed on the surface of the whole structure and then etched to core an insulation layer pattern(40), leaving the conducting layer by predetermined thickness. The second conducting spacer(43) is formed on the sidewall of the core insulation layer pattern and then wet etched, when the first conducting layer is removed simultaneously to form a cylindrical storage node consisting of the first conducting layer pattern and the second conducting spacer. The dielectric layer and the third conducting layer are formed and etched to form a plate electrode and dielectric layer pattern.
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