| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate type semiconductor element enabling improvement of the turn-off characteristics thereof without impairing turn-on characteristics. SOLUTION: This insulated gate type semiconductor element has a P type emitter layer 1, an N<-> type high-resistance base layer 3 formed above the P type emitter layer 1, a P type base layer 4 formed in contact with the base layer 3, a gate electrode 7 formed by burying in a trench groove formed at such a depth as bringing it into contact with the base layer 3 in the P type base layer 4, with a gate insulating film 6 interlaid, an N type source layer 5 formed on the surface of the P type base layer 4, in contact with the lateral side of the trench groove, and a second MOS transistor 10 provided for discharging holes outside the element, not through a channel induced by a first MOS transistor which is constituted by the N type source layer 5, the P type base layer 4, the N<-> type high-resistance base layer 3, the gate insulating film 6 and the gate electrode 7.
|
