| 摘要 |
PROBLEM TO BE SOLVED: To achieve miniaturization, high integration, the reduction of leak current, and low power consumption in a semiconductor device mounting a low voltage circuit and a high voltage circuit on the same semiconductor substrate, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises a high withstand voltage circuit comprising a first gate electrode 12b, and a source-drain region comprising low concentration and high concentration diffusion layers, and a low withstand voltage circuit comprising the gate insulation film of a second gate electrode 12c thinner than that of the first gate electrode, and a source-drain region comprising low concentration and high concentration diffusion layers, formed on a semiconductor substrate 1. Sidewall insulation films 14 and 19 are formed on the sidewall of the gate electrode of the low withstand voltage circuit, and sidewall insulation films 14, 15 and 19 wider than the sidewall insulation film for the low withstand voltage circuit are formed on the sidewall of the gate electrode of the high withstand voltage circuit. The distance from the end part of the low concentration diffusion layer directly under the gate electrode in the high withstand voltage circuit to the high concentration diffusion layer is set longer than the distance from the end part of the low concentration diffusion layer directly under the gate electrode of the low withstand voltage circuit to the high concentration diffusion layer.
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