METHOD FOR FABRICATING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, METHOD FOR FABRICATING ELEMENT AND ELEMENT

摘要

A method for fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconductor layer for forming a light emitting element structure or an element structure on a nitride based III-V compound semiconductor substrate where a plurality of second regions having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region of crystal having a first mean dislocation density, wherein an element region is defined on the nitride based III-V compound semiconductor substrate such that the second region is not included substantially or not included in a light emitting region or an active region.