发明名称 SILICON PLATE, METHOD FOR PRODUCING SILICON PLATE, AND SOLAR CELL
摘要 <p>A polycrystalline silicon plate in which at least one of the crystal grain boundary lines on the silicon plate surface is a linear crystal grain boundary line 1, and a solar cell comprising the silicon plate are disclosed. The silicon plate is produced by using an irregular surface substrate having point projections or linear projections capable of controlling the crystal boundary lines. Thus, an inexpensive high-performance silicon plate having such a feature can be produced. An inexpensive high-performance solar cell can be produced by using such a silicon plate.</p>
申请公布号 WO03033404(A1) 申请公布日期 2003.04.24
申请号 WO2002JP10636 申请日期 2002.10.11
申请人 SHARP KABUSHIKI KAISHA;TSUKUDA, YOSHIHIRO 发明人 TSUKUDA, YOSHIHIRO
分类号 C01B33/02;G11C29/00;H01L31/04;(IPC1-7):C01B33/02 主分类号 C01B33/02
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