| 发明名称 |
Method of making semiconductor device that has improved structural strength |
| 摘要 |
A method of making a semiconductor device includes a back-grinding step of grinding a back surface of a semiconductor substrate, a dicing step of dicing the semiconductor substrate along predetermined dicing lines so as to make pieces of semiconductor devices after the back-grinding step, and a laser exposure step of shining laser light on the back surface of the semiconductor substrate after the back-grinding step so as to remove grinding marks generated by the back-grinding step.
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| 申请公布号 |
US2003077880(A1) |
申请公布日期 |
2003.04.24 |
| 申请号 |
US20020101174 |
申请日期 |
2002.03.20 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
SHINJO YOSHIAKI;SHIMOBEPPU YUZO;TESHIROGI KAZUO;YOSHIMOTO KAZUHIRO;YOSHIDA EIJI;HAYASAKA NOBORU;WATANABE MITSUHISA |
| 分类号 |
B23K26/00;B23K26/06;B23K26/40;B23K101/40;B24B1/00;B24B7/22;H01L21/301;H01L21/304;H01L21/78;(IPC1-7):H01L21/78;H01L21/46;H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
B23K26/00 |
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