发明名称 |
Semiconductor device and method of manufacture thereof |
摘要 |
Semiconductor chips (4), (5) are bonded and fixed to each other in a state where the rear surfaces of the respective semiconductor chips are faced to each other so that the other longer latus (4A2) of the semiconductor chip (4) and one longer latus (5A1) of the semiconductor chip (5) may confront the side of leads (10B), and supporting leads (8) are bonded and fixed onto the circuit forming surface (4A) of the semiconductor chip (4) or the circuit forming surface (5A) of the semiconductor chip (5). Owing to such a construction, the structure of a semiconductor device can be thinned.The semiconductor chips (4), (5) are bonded and fixed to each other in a state where the, positions of the respective semiconductor chips are staggered relatively to each other so that the electrodes (6) of the semiconductor chip (4) may lie outside the other longer latus (5A2) of the semiconductor chip (5), and that the electrodes (6) of the semiconductor chip (5) may lie outside the other longer latus (4A2) of the semiconductor chip (4). Owing to such a construction, the available percentage of the products of the semiconductor device can be heightened. |
申请公布号 |
US6552437(B1) |
申请公布日期 |
2003.04.22 |
申请号 |
US20010806950 |
申请日期 |
2001.04.06 |
申请人 |
HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
MASUDA MASACHIKA;WADA TAMAKI;SUGIYAMA MICHIAKI;HIGASHINO TOMOKO;NISHITA TAKAFUMI;OHNO HIROSHI |
分类号 |
H01L21/44;H01L23/48;H01L23/495;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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