| 发明名称 |
Wet clean of organic silicate glass films |
| 摘要 |
A post-etch clean up process for OSG. After the trench (112)/via (114) etch in a dual damascene process, a wet chemistry comprising HF and H2O2 is used to remove residues without etching or damaging the OSG film in the ILD (108) or IMD (110).
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| 申请公布号 |
US6551943(B1) |
申请公布日期 |
2003.04.22 |
| 申请号 |
US20000652728 |
申请日期 |
2000.08.31 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EISSA MONA M.;YOCUM TROY A. |
| 分类号 |
H01L21/02;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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