METHOD FOR FABRICATING METALLIC NANOWIRE

摘要

PURPOSE: A method for fabricating a metallic nanowire is provided to form lots of metal nanowires on a substrate directly without any special lithography process or similar methods. CONSTITUTION: An oxide layer, about 500 nm in thickness, is formed on a wafer in an electric furnace while maintaining its temperature 1100 degree C. A tungsten thin film is deposited on the oxide layer with the width ranging 30 to 1000 nm. The resultant structure is inserted into a low pressure CVD equipment. Grown for 10-4000 seconds under the low pressure ranging 10 mtorr - 100 torr with Ar/H2 gas being flown from 30 to 300 sccm, the tungsten thin film is self-sacrificed to create nanowires. Temperature is kept from 500 to 850 degree C. during the process.