发明名称 NEW FLASH MEMORY STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a flash memory structure requiring no additional external memory part. SOLUTION: In a device, method and system for directly executing a code from a flash memory structure without requiring any different memory part even if the size of a data block capable of reading the part of a flash memory 14 at once is limited, this flash memory structure is executed as a single die chip or device as occasion demands, and it can be obtained with satisfactory manufacturing efficient at a low cost.
申请公布号 JP2003114826(A) 申请公布日期 2003.04.18
申请号 JP20020223177 申请日期 2002.07.31
申请人 MORAN DOV 发明人 MORAN DOV
分类号 G06F12/06;G06F9/445;G06F12/00;(IPC1-7):G06F12/06 主分类号 G06F12/06
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