发明名称 |
CDV METHOD OF AND REACTOR FOR SILICON CARBIDE MONOCRYSTAL GROWTH |
摘要 |
The method comprises the supply, into a chamber (2) of the horizontal type reactor with at least one substrate (10) mounted in the chamber (2), of gaseous reagents containing silicon and carbon, the heating of the chamber walls up to a temperature lying within the range 1800-2500 DEG C, and the heating of the substrate (10). The reagents are fed to the chamber (2) separately and mixed directly in the vicinity of the growing surface of the substrate (10). |
申请公布号 |
EP1151155(B1) |
申请公布日期 |
2003.04.16 |
申请号 |
EP20000905501 |
申请日期 |
2000.01.18 |
申请人 |
MAKAROV, JURY NIKOLAEVICH |
发明人 |
MAKAROV, JURY NIKOLAEVICH |
分类号 |
C23C16/32;C30B25/00;C30B25/02;C30B25/08;C30B25/10;C30B25/14;C30B29/36;H01L21/205 |
主分类号 |
C23C16/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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