Inductance and its manufacturing method

摘要

Fabrication of inductance (10) in monolithic circuit made of silicon substrate (11) with plane upper surface comprises: (a) forming a cavity in substrate following the contour of the inductance to be formed, section of the cavity being deeper than its width; (b) forming porous silicon (27) region at the level of the cavity and oxidizing this region of porous silicon; (c) filling cavity with conducting material. An Independent claim is also included for an inductance formed in a monolithic circuit by this method of fabrication.