| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics of a memory layer such as the inversion of magnetization and the maintenance of the magnetization direction of the memory layer in a magnetoresistance effect device. SOLUTION: A memory magnetic layer 11 comprises a GdFe or GdFeCo alloy, so that a coercive force is set in an optimum manner with compositions of rare earth metal Gd and transition metals Fe, Co, and magnetization of the memory magnetic layer is made optimum with the composition of GdFe or GdFeCo and the film construction of the same. Further, a magnetoresistance effect device can be constructed with ease, in which an inverse magnetic field of the memory magnetic layer is reduced, and the direction of the magnetization is maintained stably by making the magnetization of a pin magnetic layer optimum with the aid of the composition and film construction of the pin magnetic layer 13 by constituting the pin magnetic layer 13 with a TbFe or TbFeCo alloy.
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