| 摘要 |
PURPOSE: A method for modifying switching field characteristics of magnetic tunnel junctions is provided improve the reliability and yield of an MRAM(Magnetic Random Access Memory). CONSTITUTION: After forming a word line at the upper portion of a wafer, the first and second seed layer are deposited on the word line(200,202). An AF fixing layer, a fixing FM layer, a tunneling barrier, and a detection FM layer, are sequentially deposited at the upper portion of the resultant structure(204,206,208,210). After forming an array of SDT(Spin Dependent Tunneling) junctions by patterning the plurality of layers, a bit line is formed at the upper portion of the SDT junction(212,214). After annealing the fixing FM layer, a magnetic tunnel junction test is carried out(216,218). Then, the resultant structure is re-annealed(220).
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