| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a heat generated during operation of a semiconductor element cannot be efficiently dissipated to an external part and thermal breakdown occurs to the semiconductor element. SOLUTION: A package for containing a semiconductor consists of a base 1 having a placing part 1a on which the semiconductor element 4 is placed, a frame-form insulation body 2 mounted on the base 1 in a manner to surround the semiconductor element placing part 1a and having a wiring layer 6 to which each electrode of the semiconductor element 4 is connected, and a cover body 3 mounted on the frame-form insulation body 2. The frame-form insulation body 2 is a glass ceramics sintered body having a dielectric constant of 7 or less and a thermal expansion factor 4-8 ppm/ deg.C. The wiring layer 6 is a metal material having an electric resistivity of 2.5μΩ.cm or less. The base 1 consists of silicon carbide and copper, and has 3-layer structure consisting of an upper and lower layers 1b and 1d formed of 65-95 wt.% silicon carbide and 5-35 wt.% copper on the upper and lower surfaces of an intermediate layer 1c formed of 25-60 wt.% silicon carbide and 40-75 wt.% copper. |
