| 发明名称 |
Light emitting semiconductor device and light enhanced deposition method for fabricating the same |
| 摘要 |
<p>A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconductor layer formed on a region of the substrate shaded by the step portion.</p> |
| 申请公布号 |
EP0637086(B1) |
申请公布日期 |
2003.04.09 |
| 申请号 |
EP19940305613 |
申请日期 |
1994.07.28 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NAKATSU, HIROSHI |
| 分类号 |
H01L21/205;C23C16/04;H01L33/08;H01L33/14;H01L33/20;H01L33/30;H01L33/34;H01L33/38;(IPC1-7):H01L33/00;C23C16/44 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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