Method for forming isolation trench

摘要

A method for forming an isolation trench in a semiconductor substrate is provided. An isolation trench is formed in a semiconductor substrate using a trench etch mask pattern. Sidewall spacers are formed on the sidewalls of the trench. A nitride liner is formed over the sidewall spacers. The trench is filled with a trench isolation material. Because the nitride liner is protected, for example, by the sidewall spacers, the formation of a dent in the nitride liner can be prevented.