发明名称 PECVD APPARATUS AND METHOD FOR FABRICATING CARBON NANO TUBE USING THE SAME
摘要 PURPOSE: A PECVD(Plasma Enhanced Chemical Vapor Deposition) apparatus and a method for fabricating a carbon nano tube using the same are provided to perform a deposition process under a low temperature by installing a grid between a gas supply portion and a substrate holder. CONSTITUTION: A process chamber(10) is used for generating plasma to deposit a particular material. A gas supply portion(12) is installed at an upper portion of the inside of the process chamber(10). A substrate holder(14) is installed on a bottom portion of the inside of the process chamber(10) in order to arrange a substrate. A window is formed at one side of the process chamber(10). An RF power supply portion(19) supplies RF power by using the gas supply portion(12) and the substrate holder(14) as an upper electrode and a lower electrode. An exhaust portion is formed at a bottom portion of the process chamber(10). The exhaust portion is formed with a switching valve(32), a turbo molecule pump(34), a rotary pump(36), and a scrubber(38). A grid(16) is installed between the gas supply portion(12) and the substrate holder(14). A grid power supply portion(29) supplies the power to the grid(16). The first and the second position control portions control a position of the grid(16).
申请公布号 KR20030028296(A) 申请公布日期 2003.04.08
申请号 KR20010060349 申请日期 2001.09.28
申请人 HANYANG HAK WON CO., LTD. 发明人 HONG, JIN PYO;KANG, HO SEOK;KIM, CHAE OK;YOON, HYEONG JU
分类号 H01L21/205;C01B31/02;C23C16/26;C23C16/505;C23C16/509;H01J9/02;H01J37/32;(IPC1-7):H01L21/205 主分类号 H01L21/205
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