| 摘要 |
PROBLEM TO BE SOLVED: To overcome a problem that an ashing rate is decreased if the ashing is performed by using the same chamber which has been used for etching, and residues are left after the ashing if the etching chamber is used for the ashing as it is. SOLUTION: This etching and ashing chamber 1 comprises an upper electrode 11 in a chamber 2, a susceptor 4 which is arranged under the upper electrode 11 facing each other to load a wafer W, a first and second high frequency power sources 20, 22 for supplying the first and second high frequency powers, and a process gas supply source 16 for supplying an ashing gas and an etching gas. When an ashing or etching is performed, high frequency power is supplied from the first high frequency power source 20 to the upper electrode 11, and from the second high frequency power source 22 to the susceptor 4. |
