| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that a metal bump for joining a semiconductor device to a wiring board is ruptured by stress that is generated due to the difference in the thermal expansion between the semiconductor device and wiring board, in a packaging structure where the semiconductor device is subjected to flip-chip mounting to the wiring board. SOLUTION: The wiring board has a wiring conductor 3 (3c) inside an insulating substrate 1, and at the same time an electrode pad that is electrically connected to the wiring conductor 3c for allowing a semiconductor device 2 to be subjected to flip-chip mounting onto the surface of the insulating substrate 1. In this case, the electrode pad comprises a through conductor 3b that is formed from the wiring conductor 3c to the surface of the insulating substrate 1, at the same time allows an end section to project onto the surface by a height of 20 to 150μm, and a land conductor 3a that is formed so that the end section of the through conductor 3b is covered. Even if stress that is generated due to the difference in the thermal expansion between the semiconductor device 2 and the wiring board is applied, rupture does not occur between an electrode pad 5 at the side of the semiconductor device 2 and the electrode pad of the wiring board.</p> |
