发明名称 |
I/O TERMINAL AND PACKAGE FOR ACCOMMODATING SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an I/O terminal and a semiconductor package employing it in which the size and thickness can be reduced and transmission loss can be reduced at the time of inputting/outputting a high frequency signal of 20 GHz or above while ensuring required strength. SOLUTION: At a part of a planar section 4 where line conductors 2 are exposed, first through conductors 6a are provided at intervals 8 each having a quarter of the wavelength of a high frequency signal or less such that a coplanar ground conductor 3 and a ground conductor 3c on the lower surface of the planar section 4 are connected and arranged in the direction substantially parallel with the line direction. At a part of the planar section 4 bonded with a standing wall part 5, second through conductors 6b are provided at the intervals 8 each having a quarter of the wavelength of a high frequency signal or less such that the ground conductor 3c on the upper surface of the standing wall 5 and the ground conductor 3b on the lower surface of the planar section 4 are connected through the coplanar ground conductor 3 and arranged in the direction substantially parallel with the line direction. The interval 8a between the second through conductor 6b and the adjacent side face of the standing wall part 5 substantially perpendicular to the line direction is not larger than one eighth of the wavelength of a high frequency signal. |
申请公布号 |
JP2003100922(A) |
申请公布日期 |
2003.04.04 |
申请号 |
JP20010296629 |
申请日期 |
2001.09.27 |
申请人 |
KYOCERA CORP |
发明人 |
YANAGISAWA MITSUO;WADA HISAYOSHI |
分类号 |
H01L23/38;H01L23/02;H01L31/0232;H01S5/022;(IPC1-7):H01L23/02;H01L31/023 |
主分类号 |
H01L23/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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