| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor evaluating method and system capable of accurately measuring the distribution of the concentration of impurities on the surface of a base. SOLUTION: The semiconductor evaluating device comprises an initial characteristic measuring part 1, a film thickness reversely extracting part 2, a MOS characteristic measuring part 3 and a surface concentration determining part 4. Initially, gate voltage is set to about 1 V. While the thickness of an insulating film is adjusted, the calculation result of gate current (gate capacitance) is fitted to a measurement result thereof to reversely extract the thickness of the insulating film. Then, while the concentration of impurities on the surface of a second conductive film is adjusted within a range of -1 V to 0 V of the gate voltage, the calculation result of J-V characteristics or C-V characteristics is fitted to a measurement result to reversely extract the concentration of impurities on the surface. Accordingly, the concentration of impurities on the surface of the second conductive film below the insulating film can be accurately estimated.
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