| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a photovoltaic device, wherein high yield and high conversion characteristics are realized. SOLUTION: An i-type amorphous silicon layer 2 and a p-type amorphous silicon layer 3 are formed on a substrate 1 composed of n-type silicon (a), and an nip junction is obtained (b). A transparent conducting film 4 is formed on the p-type amorphous silicon layer 3 (c). Masking is performed to the central effective part of the transparent conducting film 4 by using mask member 7, and only the end portion of the transparent conducting film 4 is subjected to oxygen plasma treatment and made high resistance (d). As a result, leakage between the substrate 1 and the transparent conducting film 4 is restrained. Finally, a comb-shaped collecting electrode 5 and a back electrode 6 are formed (e), and a photovoltaic device is manufactured. |
