| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce power consumption and to prevent spoiling reliability of an internal circuit, in a semiconductor memory. SOLUTION: Current consumption is reduced by making a step-down circuit itself a standby state by a transistor N3 at the time of standby state of an internal circuit, while a transistor P4 being a switch element supplying reference voltage Vref as power source voltage Vint for internal circuit is provided additionally and separately, at the time of standby state of the step-down circuit. Therefore, reference voltage Vref being the same voltage as that at the time of operation can be supplied as power source voltage of the internal circuit at the time of standby, the reliability of an element never be spoiled.</p> |
