| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, not necessitating any photolithographic process for gettering and not forming any area of CG silicon film which is unable to be used while practical and permitting mass production, and to provide the semiconductor device. SOLUTION: An amorphous silicon film 12 is crystallized by employing Ni to form a CG silicon film 14. Next, the oxidized film of silicon 15 is formed on the whole surface of the CG silicon film 14 and, further, a second silicon film 16 containing phosphor of a high concentration is formed on the whole surface of the oxidized film 15 of silicon. Then, heating treatment is applied thereon to effect gettering of Ni from the CG silicon film 14 into the second silicon film 16. Thereafter, the second silicon film 16 is removed.
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