| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem wherein heat generated during working of a semiconductor device can not be released, and thermal cracking occurs on the semiconductor device. SOLUTION: The package for housing a semiconductor device consists of a substrate 1 with a three layer structure. The upper and lower sides of an intermediate layer 1c consisting of, by weight, 40 to 70% tungsten and 30 to 60% copper are provided with the upper and lower layers 1b and 1d consisting of 25 to 35% tungsten and 65 to 75% copper, a frame-shaped insulator 2 consisting of a sintered compact obtained by sintering a formed body containing 20 to 80 vol.% of lithium silicate glass containing 5 to 30 wt.% Li2 O3 , and having a point of 40 to 800 deg.C, and 20 to 80 vol.% of a filler component consisting of at least one kind selected from quartz, cristobalite, tridymite, enstatite and forsterite, and containing at least one kind of crystal phase selected from quartz, cristobalite, tridymite, enstatite and forsterite, and a cover body 3.</p> |
