| 摘要 |
PURPOSE: A pedestal heater to be used at a chemical vapor deposition of a semiconductor wafer and a fabricating method thereof are provided to improve productivity by reducing fabrication processes. CONSTITUTION: A pedestal heater(100) is formed with a heater block(110), a heater(120), an aluminum back cover(130), and an extension member(140). An absorbing and desorbing groove(111) is formed on the heater block(110). A gas exhaust hole(112) is formed at an upper side of the heater block(110). A plurality of ring-shaped grooves(113,114) are formed at a lower portion of the heater block(110). The aluminum back cover(130) is formed by coating aluminum powder onto the ring-shaped groove(114) under temperature of 450 to 700 degrees centigrade and pressure of 2 to 7kg. The extension member(140) is fixed to a lower portion of the aluminum back cover(130).
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