发明名称 |
Method of making transistors with gate insulation layers of differing thickness |
摘要 |
In one illustrative embodiment, the method comprises forming a sacrificial layer of material above a substrate comprised of silicon, performing a wet etching process to remove the sacrificial layer, implanting fluorine atoms into selected portions of the substrate after the sacrificial layer is removed, and performing a thermal oxidation process to form a plurality of gate insulation layers above the substrate, the gate insulation layers formed above the fluorine implanted selected portions of the substrate having a thickness that is greater than a thickness of the gate insulation layers formed above portions of the substrate not implanted with fluorine.
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申请公布号 |
US6541321(B1) |
申请公布日期 |
2003.04.01 |
申请号 |
US20020145519 |
申请日期 |
2002.05.14 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BULLER JAMES F.;CHEEK JON D. |
分类号 |
H01L21/316;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/78;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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