| 摘要 |
A method of measuring reflectivity of a semiconductor laser facet by first fabricating first and second semiconductor lasers. The reflectance of the facets of the lasers are then determined. The threshold current densities of the lasers are then measured. If the reflectance of the first facet of the first semiconductor laser is modified then setting u=1, x=1, and y=1. If the reflectance of the first facet and the second facet of the first semiconductor laser are modified to the same extent then setting u=1, x=1, and y=0.5. The threshold current density of the first semiconductor laser after reflectivity modification is then measured. The reflectance of the modified first semiconductor laser is then calculated as follows:
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